KDS114WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR DIODE

KDS114WS
SILICON EPITAXIAL PLANAR DIODE
Features
• Small package
• Small total capacitance
• Low series resistance
Applications
• VHF tuner band switch
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Reverse Voltage
Forward Current
Junction Temperature Range
Storage Temperature Range
Electrical Characteristics (T_a = 25 ^OC)
Parameter
Forward Voltage
at I_F = 2 mA
Reverse Current
at V_R = 15 V
Reverse Voltage
at I_R = 1 µA
Total Capacitance
at V_R = 5 V, f = 1 MHz
Series Resistance
at I_F = 2 mA, f = 100 MHz
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
W7
Top View
Marking Code: "W7"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_R
30
V
I_F
100
mA
T_J
150
O_C
T_stg
- 55 to + 150
O_C
Symbol
Min.
Max.
Unit
V_F
-
0.85
V
I_R
-
0.1
µA
V_R
30
-
V
C_T
-
1.2
pF
r_S
-
0.9
Ω
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006