HZS2A1 Datasheet, PDF (1/4 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANER ZENER DIODES

HZS Series
SILICON EPITAXIAL PLANER ZENER DIODES
for Stabilized Power Supply
Features
• Low leakage, low zener impedance and maximum
power dissipation of 400 mW are ideally suited for
stabilized power supply, etc.
• Wide spectrum from 1.6 V through 38 V of zener
voltage provide flexible application.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX ^{Max. 2.9}
Min. 27.5
Glass Case DO-34
Dimensions in mm
Symbol
Value
Unit
P_tot
400
mW
T_j
200
O_C
T_S
- 55 to + 175
O_C
Characteristics at T_a = 25 ^OC
Zener Voltage ¹⁾
Type
V_Z (V)
Min.
Max.
HZS2A1
HZS2A2
HZS2A3
HZS2B1
HZS2B2
HZS2B3
HZS2C1
HZS2C2
HZS2C3
HZS3A1
HZS3A2
HZS3A3
HZS3B1
HZS3B2
HZS3B3
HZS3C1
HZS3C2
HZS3C3
1.6
1.8
1.7
1.9
1.8
2
1.9
2.1
2
2.2
2.1
2.3
2.2
2.4
2.3
2.5
2.4
2.6
2.5
2.7
2.6
2.8
2.7
2.9
2.8
3
2.9
3.1
3
3.2
3.1
3.3
3.2
3.4
3.3
3.5
I_Z (mA)
5
5
5
Reverse Current
I_R (µA)
Max.
V_R (V)
25
0.5
5
0.5
5
0.5
Dynamic Resistance
r_d (Ω)
Max.
l_Z (mA)
100
5
100
5
100
5
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 25/06/2007