HSC226 Datasheet, PDF (1/3 Pages) Hitachi Semiconductor – Silicon Schottky Barrier Diode

HSC226
SILICON SCHOTTKY BARRIER DIODE
Features
• Low reverse current, low capacitance
• Ultra small flat package is suitable for surface
mount design
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
Forward Current
Non-Repetitive Peak Forward Surge Current
Junction Temperature Range
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 5 mA
Reverse Current
at V_R = 20 V
Capacitance
at V_R = 1 V, f = 1 MHz
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
W
Top View
Marking Code: "W"
Simplified outline SOD-523 and symbol
Symbol
Value
Unit
V_RRM
25
V
I_F
50
mA
I_FSM
200
mA
T_j
125
O_C
T_s
- 55 to + 125
O_C
Symbol
Max.
Unit
V_F
0.33
V
0.38
I_R
0.45
µA
C
2.8
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/11/2006