DB3 Datasheet, PDF (1/2 Pages) STMicroelectronics – TRIGGER DIODES

DB3, DB4, DC34
SILICON BIDIRECTIONAL DIACS
The glass passivated, three-layer, two terminal, axial lead,
hermetically sealed diacs are designed specifically for
triggering thyristors. They demonstrate low breakover
current at breakover voltage as they withstand peak pulse
current. These diacs are intended for use in thyristor phase
control, circuits for lamp-dimming, universal-motor speed
controls, and heat controls.
Max. 0.5
Max. 1.9
Min. 27.5
Black
Part No.
Black
"ST" Brand
XXX
Max. 3.9
ST
Min. 27.5
Glass Case DO-35
Dimensions in mm
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Power Dissipation (T_a = 65 ^OC)
Repetitive Peak On-state Current (tp = 20 µs, f = 100 Hz)
Operating Junction and Storage Temperature Range
Symbol
Value
Unit
P_tot
150
mW
I_TRM
2
A
T_j,T_stg
- 40 to + 125
O_C
Characteristics at T_a = 25 ^OC
Parameter
Breakover Voltage
Breakover Currents
Breakover Voltage Symmetry
Dynamic Breakover Voltage
ΔI = [I_BR to I_F = 10 mA]
DB3
DC34
DB4
Symbol
V_(BR)1 and V_(BR)2
I_(BR)1 and I_(BR)2
[V_(BR)1]-[V_(BR)2]
| ΔV ± |
Min.
28
30
35
-
-
5
Max.
Unit
36
38
V
45
200
µA
3.8
V
-
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 08/11/2008