BV45 Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Planar Transistor

BV45
NPN Silicon Epitaxial Planar Transistor
High voltage fast switching power transistor
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current
Total Dissipation
Operating Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
TO-92 Plastic Package
Weight approx. 0.19g
Value
Unit
700
V
400
V
9
V
0.75
A
1.5
A
0.4
A
0.75
A
0.95
W
150
O_C
- 65 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 5 V, I_C = 0.2 A
at V_CE = 5 V, I_C = 0.4 A
Collector Cutoff Current
at V_CB = 700 V
Emitter Cutoff Current
at V_EB = 9 V
Collector Emitter Breakdown Voltage
at I_C = 1 mA
Collector Emitter Saturation Voltage
at I_C = 0.2 A, I_B = 40 mA
at I_C = 0.3 A, I_B = 75 mA
at I_C = 0.4 A, I_B = 135 mA
Base Emitter Saturation Voltage
at I_C = 0.2 A, I_B = 40 mA
at I_C = 0.3 A, I_B = 75 mA
Symbol
h_FE
h_FE
I_CBO
I_EBO
V_(BR)CEO
V_CEsat
V_BEsat
Min.
10
5
-
-
400
-
-
-
-
-
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Max.
Unit
30
-
20
-
250
µA
1
mA
-
V
0.5
1
V
1.5
1
V
1.2
Dated : 16/09/2006