BFS20 Datasheet, PDF (1/1 Pages) NXP Semiconductors – NPN medium frequency transistor

BFS20
NPN Silicon Epitaxial Planar Transistor
High frequency transistor for IF and VHF applications
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 10 V, I_C = 7 mA
Collector Cutoff Current
at V_CB = 20 V
Emitter Cutoff Current
at V_EB = 4 V
Base Emitter Voltage
at V_CE = 10 V, I_C = 7 mA
Transition Frequency
at V_CE = 10 V, I_C = 5 mA, f = 100 MHz
Collector Base Capacitance
at V_CB = 10 V, f = 1 MHz
SOT-23 Plastic Package
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_S
30
20
4
25
200
150
- 65 to + 150
V
V
V
mA
mW
O_C
O_C
Symbol
h_FE
Min.
40
I_CBO
-
I_EBO
-
V_BE
-
f_T
275
C_OB
-
Typ.
-
-
-
-
450
1
Max.
140
100
100
0.9
-
Unit
-
nA
µA
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 11/11/2006