BD135T Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – NPN Silicon Epitaxial Power Transistor

BD135T / BD137T / BD139T
NPN SILICON EPITAXIAL POWER
TRANSISTOR
These devices are designed as Audio Amplifier
and Drivers Utilizing.
•
E
C
B
TO-126 Plastic Package
Absolute Maximum Ratings (T_a=25 ^OC)
Parameter
Collector Emitter Voltage
Collector Emitter Voltage ( R_BE = 1 KΩ)
Collector Base Voltage
Emitter Base Voltage
Collector Current - Continuous
Collector Current - Peak ¹⁾
Base Current - Continuous
Total Power Dissipation @ T_A=25 ^OC
Derate above 25 ^OC
Total Power Dissipation @ T_C=25 ^OC
Derate above 25 ^OC
Total Power Dissipation @ T_C=70 ^OC
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Symbol
V_CEO
V_CER
V_CBO
V_EBO
I_C
I_CM
I_B
P_D
P_D
P_D
T_J, T_s
R_θJA
R_θJC
Value
BD135T BD137T BD139T
Unit
45
60
80
V
45
60
100
V
45
60
100
V
5
V
1.5
2
A
0.5
A
1.25
10
W
mW/ ^OC
12.5
100
8
-55 to +150
100
10
W
mW/ ^OC
W
O_C
O_C/W
O_C/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/03/2006