BCW30 Datasheet, PDF (1/1 Pages) STMicroelectronics – SMALL SIGNAL PNP TRANSISTORS

BCW30
PNP Silicon Epitaxial Planar Transistor
general purpose switching and amplification
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 5 V, -I_C = 2 mA
Collector Cutoff Current
at -V_CB = 30 V
Emitter Cutoff Current
at -V_EB = 5 V
Collector Base Breakdown Voltage
at -I_C = 10 µA
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E = 10 µA
Collector Emitter Saturation Voltage
at -I_C = 10 mA, -I_B = 0.5 mA
Base Emitter Voltage
at -V_CE = 5 V, -I_C = 2 mA
Transition Frequency
at -V_CE = 5 V, I_E = 10 mA, f = 100 MHz
Collector Base Capacitance
at -V_CB = 10 V, f = 1 MHz
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
-I_CM
P_tot
T_j
T_S
SOT-23 Plastic Package
Value
Unit
32
V
32
V
5
V
100
mA
200
mA
200
mW
150
O_C
- 55 to + 150
O_C
Symbol Min.
h_FE
215
-I_CBO
-
-I_EBO
-
-V_(BR)CBO
32
-V_(BR)CEO
32
-V_(BR)EBO
5
-V_CE(sat)
-
-V_BE
0.6
f_T
100
C_CBO
-
Typ.
-
-
-
-
-
-
-
-
-
4.5
Max.
500
100
100
-
-
-
0.3
0.75
-
-
Unit
-
nA
nA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 24/08/2007