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| BCV27 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN Darlington transistors | |||
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BCV27 / BCV47
NPN Darlington Transistors
for preamplifier input applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 5 V, IC = 1 mA
at VCE = 5 V, IC = 10 mA
at VCE = 5 V, IC = 100 mA
Collector Cutoff Current
at VCB = 30 V
at VCB = 60 V
Emitter Cutoff Current
at VEB = 10 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 100 mA, IB = 0.1 mA
Base Emitter Saturation Voltage
at IC = 100 mA, IB = 0.1 mA
Base Emitter On-state Voltage
at IC = 10 mA, VCE = 5 V
Transition Frequency
at VCE = 5 V, IC = 30 mA, f = 100 MHz
SOT-23 Plastic Package
Symbol
Value
Unit
BCV27
BCV47
VCBO
40
80
V
BCV27
BCV47
VCEO
30
60
V
VEBO
10
V
IC
500
mA
ICM
800
mA
IB
100
mA
Ptot
200
mW
Tj
150
OC
TS
- 65 to + 150
OC
Symbol Min.
BCV27
BCV47
BCV27
BCV47
BCV27
BCV47
hFE
4000
hFE
2000
hFE 10000
hFE
4000
hFE 20000
hFE 10000
BCV27
ICBO
-
BCV47
-
IEBO
-
BCV27
BCV47
V(BR)CBO
40
80
BCV27
BCV47
V(BR)CEO
30
60
V(BR)EBO
10
VCE(sat)
-
VBE(sat)
-
VBE(on)
-
fT
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
220
Max.
-
-
-
-
-
-
100
100
100
-
-
-
-
1
1.5
1.4
-
Unit
-
-
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 18/08/2007
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