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| BCV26 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP Darlington transistors | |||
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BCV26 / BCV46
PNP Darlington Transistors
for preamplifier input applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 1 mA
at -VCE = 5 V, -IC = 10 mA
at -VCE = 5 V, -IC = 100 mA
Collector Cutoff Current
at -VCB = 30 V
at -VCB = 60 V
Emitter Cutoff Current
at -VEB = 10 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 100 mA, -IB = 0.1 mA
Base Emitter Saturation Voltage
at -IC = 100 mA, -IB = 0.1 mA
Base Emitter On-state Voltage
at -IC = 10 mA, -VCE = 5 V
Transition Frequency
at -VCE = 5 V, -IC = 30 mA, f = 100 MHz
SOT-23 Plastic Package
Symbol
Value
Unit
BCV26
BCV46
-VCBO
40
80
V
BCV26
BCV46
-VCEO
30
60
V
-VEBO
10
V
-IC
500
mA
-ICM
800
mA
-IB
100
mA
Ptot
200
mW
Tj
150
OC
TS
- 65 to + 150
OC
Symbol Min.
BCV26
BCV46
BCV26
BCV46
BCV26
BCV46
hFE
4000
hFE
2000
hFE 10000
hFE
4000
hFE 20000
hFE 10000
BCV26 -ICBO
-
BCV46
-
-IEBO
-
BCV26
BCV46
-V(BR)CBO
40
80
BCV26
BCV46
-V(BR)CEO
30
60
-V(BR)EBO
10
-VCE(sat)
-
-VBE(sat)
-
-VBE(on)
-
fT
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
220
Max.
-
-
-
-
-
-
100
100
100
-
-
-
-
1
1.5
1.4
-
Unit
-
-
-
-
-
-
nA
nA
V
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 18/08/2007
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