BC817 Datasheet, PDF (1/2 Pages) NXP Semiconductors – NPN general purpose transistor

BC817 / BC818
NPN Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier application,
These transistors are subdivided into three groups
–16, -25, -40 according to their current gain.
As complementary types, the PNP transistors
BC807 and BC808 are recommended.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature Range
BC817
BC818
BC817
BC818
SOT-23 Plastic Package
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_tot
R_θJA
T_J
T_s
Value
50
30
45
25
5
500
200
500
150
- 55 to + 150
Unit
V
V
V
mA
mW
K/W
O_C
O_C
Electrical Characteristics at T_a = 25 ^OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at V_CE = 1 V, I_C = 100 mA
Current Gain Group -16 h_FE
100
-
250
-
-25
h_FE
160
-
400
-
-40
h_FE
250
-
600
-
at V_CE = 1 V, I_C = 500 mA
h_FE
40
-
-
-
Collector Base Cutoff Current
at V_CB = 20 V
Emitter-Base Cutoff Current
at V_EB = 5 V
Collector Saturation Voltage
at I_C = 500 mA, I_B = 50 mA
Base-Emitter Voltage
at I_C = 500 mA, V_CE = 1 V
Gain -Bandwidth Product
at V_CE = 5 V, I_C = 10 mA, f = 50 MHz
Collector-Base Capacitance
at V_CB = 10 V, f = 1 MHz
I_CBO
-
-
100
nA
I_EBO
-
-
100
nA
V_CEsat
-
-
0.7
V
V_BE(on)
-
-
1.2
V
f_T
100
-
-
MHz
C_CBO
-
5
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/12/2005