BC807 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP general purpose transistor

BC807 / BC808
PNP Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier applications
These transistors are subdivided into three groups
-16, -25 and -40, according to their current gain.
As complementary types the NPN transistors BC817
and BC818 are recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
BC807
BC808
-V_CBO
50
30
V
BC807
BC808
-V_CEO
45
25
V
Emitter Base Voltage
-V_EBO
5
V
Collector Current
-I_C
500
mA
Power Dissipation
P_tot
200
mW
Thermal Resistance Junction to Ambient Air
R_θJA
500
K/W
Junction Temperature
T_J
150
O_C
Storage Temperature Range
T_S
- 55 to + 150
O_C
Electrical Characteristics at T_a = 25 ^OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -V_CE = 1 V, -I_C = 100 mA
Current Gain Group -16
h_FE
100
-
250
-
-25
h_FE
160
-
400
-
-40
h_FE
250
-
600
-
at -V_CE = 1 V, -I_C = 500 mA
h_FE
40
-
-
-
Collector Base Cutoff Current
at -V_CB = 20 V
Emitter-Base Cutoff Current
at -V_EB = 5 V
Collector Saturation Voltage
at -I_C = 500 mA, -I_B = 50 mA
Base-Emitter Voltage
at -I_C = 500 mA, -V_CE = 1 V
Gain -Bandwidth Product
at -V_CE = 5 V, -I_C = 10 mA, f = 50 MHz
Collector-Base Capacitance
at -V_CB = 10 V, f = 1 MHz
-I_CBO
-
-I_EBO
-
-V_CEsat
-
-V_BE(on)
-
f_T
80
C_CBO
-
-
100
nA
-
100
nA
-
0.7
V
-
1.2
V
-
-
MHz
9
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/12/2006