BC556 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistors

BC556…BC560
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications
These transistors are subdivided into three groups A,
B and C according to their current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
BC556
BC557, BC560
BC558, BC559
BC556
BC557, BC560
BC558, BC559
Collector Current (DC)
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
-I_CM
P_tot
T_j
T_S
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Value
Unit
80
50
V
30
65
45
V
30
5
V
100
mA
200
mA
500
mW
150
O_C
- 65 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -V_CE = 5 V, -I_C = 2 mA
Current Gain Group _A
h_FE
110
220
-
B
h_FE
200
450
-
C
h_FE
420
800
-
Collector Base Cutoff Current
at -V_CB = 30 V
-I_CBO
-
15
nA
Emitter Base Cutoff Current
at -V_EB = 5 V
-I_EBO
-
100
nA
Collector Base Breakdown Voltage
BC556
80
-
at -I_C = 100 µA
BC557, BC560 -V(BR)CBO
50
-
V
BC558, BC559
30
-
Collector Emitter Breakdown Voltage
BC556
65
-
at -I_C = 2 mA
BC557, BC560 -V(BR)CEO
45
-
V
BC558, BC559
30
-
Emitter Base Breakdown Voltage
at -I_E = 100 µA
-V_(BR)EBO
5
-
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007