BC546 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistors

BC546…BC550
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier application
These transistors are subdivided into three groups A,
B and C according to their current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
BC546
BC547, BC550
BC548, BC549
BC546
BC547, BC550
BC548, BC549
Collector Current (DC)
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_CM
P_tot
T_j
T_S
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Value
Unit
80
50
V
30
65
45
V
30
6
V
100
mA
200
mA
500
mW
150
O_C
- 65 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at V_CE = 5 V, I_C = 2 mA
Current Gain Group _A
h_FE
110
220
-
B
h_FE
200
450
-
C
h_FE
420
800
-
Collector Base Cutoff Current
at V_CB = 30 V
I_CBO
-
15
nA
Emitter Base Cutoff Current
at V_EB = 5 V
I_EBO
-
100
nA
Collector Base Breakdown Voltage
BC546
80
-
at I_C = 100 µA
BC547, BC550 V(BR)CBO
50
-
V
BC548, BC549
30
-
Collector Emitter Breakdown Voltage
BC546
65
-
at I_C = 1 mA
BC547, BC550 V(BR)CEO
45
-
V
BC548, BC549
30
-
Emitter Base Breakdown Voltage
at I_E = 10 µA
V_(BR)EBO
6
-
V
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(Subsidiary of Sino-Tech International Holdings Limited, a company
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®
Dated : 27/12/2007