BC517 Datasheet, PDF (1/1 Pages) Motorola, Inc – Darlington Transistors

BC517
NPN Silicon Darlington Transistor
Collector
Base
Emitter
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics (T_a = 25 ^OC)
Parameter
DC Current Gain
at V_CE = 2 V, I_C = 20 mA
Collector Saturation Voltage
at I_C = 100 mA, I_B = 0.1 mA
Base Emitter On Voltage
at V_CE = 5 V, I_C = 10 mA
Collector Base Breakdown Voltage
at I_C = 100 µA
Collector Emitter Breakdown Voltage
at I_C = 2 mA
Emitter Base Breakdown Voltage
at I_E = 100 µA
Collector Cutoff Current
at V_CE = 30 V
Collector Cutoff Current
at V_CB = 30 V
Emitter Cutoff Current
at V_EB = 10 V
Current-Gain-Bandwidth Product
at V_CE = 5 V, I_C = 10 mA, f = 100 MHz
Symbol
V_CBO
V_CES
V_EBO
I_C
P_tot
T_j
T_S
TO-92 Plastic Package
Weight approx. 0.19g
Value
Unit
40
V
30
V
10
V
500
mA
625
mW
150
O_C
- 55 to + 150
O_C
Symbol
h_FE
V_CEsat
V_BE(on)
V_(BR)CBO
V_(BR)CES
V_(BR)EBO
I_CES
I_CBO
I_EBO
f_T
Min.
30,000
-
-
40
30
10
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
200
Max.
-
1
1.4
-
-
-
500
100
100
-
Unit
-
V
V
V
V
V
nA
nA
nA
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated :15/06/2006