BC369 Datasheet, PDF (1/2 Pages) NXP Semiconductors – PNP medium power transistor

BC369
PNP Silicon Epitaxial Planar Transistor
Applications
• General purpose switching and amplification
• Power application such as audio output stages
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 10 V, -I_C = 5 mA
at -V_CE = 1 V, -I_C = 500 mA
at -V_CE = 1 V, -I_C = 1 A
Collector Base Cutoff Current
at -V_CB = 25 V
Emitter Base Cutoff Current
at -V_EB = 5 V
Collector Base Breakdown Voltage
at -I_C = 100 µA
Collector Emitter Breakdown Voltage
at -I_C = 10 mA
Emitter Base Breakdown Voltage
at -I_E = 100 µA
Collector Emitter Saturation Voltage
at -I_C = 1 A, -I_B = 100 mA
Base Emitter On Voltage
at -V_CE = 1 V, -I_C = 1 A
Gain Bandwidth Product
at -V_CE = 5 V, -I_C = 10 mA, f = 20 MHz
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
-I_CM
P_tot
T_j
T_S
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Value
Unit
32
V
20
V
5
V
1
A
2
A
625
mW
150
O_C
- 55 to + 150
O_C
Symbol
h_FE
h_FE
h_FE
-I_CBO
-I_EBO
-V_(BR)CBO
-V_(BR)CEO
-V_(BR)EBO
-V_CE(sat)
-V_BE(on)
f_T
Min.
50
85
60
-
-
32
20
5
-
-
40
Max.
-
375
-
100
100
-
-
-
0.5
1
-
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007