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| BC368 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistors | |||
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BC368
NPN Silicon Epitaxial Planar Transistor
Applications
⢠General purpose switching and amplification
⢠Power applications such as audio output stages
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 10 V, IC = 5 mA
at VCE = 1 V, IC = 500 mA
at VCE = 1 V, IC = 1 A
Collector Base Cutoff Current
at VCB = 25 V
Emitter Base Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 1 A, IB = 100 mA
Base Emitter On Voltage
at VCE = 1 V, IC = 1 A
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 20 MHz
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Symbol
Value
Unit
VCBO
32
V
VCEO
20
V
VEBO
5
V
IC
1
A
ICM
2
A
Ptot
625
mW
Tj
150
OC
TS
- 55 to + 150
OC
Symbol
hFE
hFE
hFE
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(on)
fT
Min.
50
85
60
-
-
32
20
5
-
-
40
Max.
-
375
-
100
100
-
-
-
0.5
1
-
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
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