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| BC337 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistor | |||
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BC337â¦BC338
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications
These types are subdivided into three groups -16,
-25 and -40, according to their DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tj
TS
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
BC337 BC338
Unit
50
30
V
45
25
V
5
V
800
mA
1
A
625
mW
150
OC
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at VCE = 1 V, IC = 100 mA
Current Gain Group -16 hFE
100
-
250
-
-25
hFE
160
-
400
-
-40
hFE
250
-
630
-
at VCE = 1 V, IC = 300 mA
-16
hFE
60
-
-
-
-25
hFE
100
-
-
-
-40
hFE
170
-
-
-
Collector Base Cutoff Current
at VCB = 50 V
at VCB = 30 V
Collector Base Breakdown Voltage
at IC = 100 µA
Collector Emitter Breakdown Voltage
at IC = 2 mA
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 500 mA, IB = 50 mA
Base Emitter On Voltage
at VCE = 1 V, IC = 300 mA
Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 50 MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
BC337
ICBO
-
BC338
-
BC337
BC338
V(BR)CBO
50
30
BC337
BC338
V(BR)CEO
45
25
V(BR)EBO
5
VCE(sat)
-
VBE(on)
-
fT
-
CCBO
-
-
100
nA
-
100
-
-
-
-
V
-
-
-
-
V
-
-
V
-
0.7
V
-
1.2
V
100
-
MHz
12
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
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