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| BC327 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistors(PNP) | |||
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BC327â¦BC328
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications
These types are subdivided into three groups -16,
-25 and -40, according to their DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Peak Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Symbol BC327 BC328
Unit
-VCBO
50
30
V
-VCEO
45
25
V
-VEBO
5
V
-IC
800
mA
-ICM
1
A
Ptot
625
mW
Tj
150
OC
TS
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 1 V, -IC = 100 mA
Current Gain Group -16
hFE
100
-
250
-
-25
hFE
160
-
400
-
-40
hFE
250
-
630
-
at -VCE = 1 V, -IC = 300 mA
-16
hFE
60
-
-
-
-25
hFE
100
-
-
-
-40
hFE
170
-
-
-
Collector Base Cutoff Current
at -VCB = 45 V
at -VCB = 25 V
Collector Base Breakdown Voltage
at -IC = 100 µA
BC327 -ICBO
-
BC328
-
BC327
BC328
-V(BR)CBO
50
30
-
100
nA
-
100
-
-
-
-
V
Collector Emitter Breakdown Voltage
at -IC = 10 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 500 mA, -IB = 50 mA
Base Emitter On Voltage
at -VCE = 1 V, -IC = 300 mA
Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 50 MHz
Collector Base Capacitance
at -VCB = 10 V, f = 1 MHz
BC327
BC328
-V(BR)CEO
45
25
-
-
-
-
V
-V(BR)EBO
5
-
-
V
-VCE(sat)
-
-
0.7
V
-VBE(on)
-
-
1.2
V
fT
-
100
-
MHz
CCBO
-
12
-
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
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