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| BC307 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistors(PNP) | |||
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BC307â¦BC308
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Symbol BC307 BC308
Unit
-VCBO
-VCEO
-VEBO
-IC
Ptot
50
30
45
25
5
100
500
V
V
V
mA
mW
Tj
150
OC
TS
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 2 mA
Current Gain Group A
B
C
Collector Base Cutoff Current
at -VCB = 50 V
at -VCB = 30 V
BC307
BC308
Collector Emitter Breakdown Voltage
BC307
at -IC = 2 mA
BC308
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 0.5 mA
at -IC = 100 mA, -IB = 5 mA
Base Emitter On Voltage
at -VCE = 5 V, -IC = 2 mA
Current Gain Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 100 MHz
Collector Base Capacitance
at -VCB = 10 V, f = 1 MHz
Symbol
hFE
hFE
hFE
-ICBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(on)
fT
Ccb
Min.
120
180
380
-
-
45
25
5
-
-
0.55
100
-
Max.
220
460
800
15
15
-
-
-
0.3
0.6
0.7
-
6
Unit
-
-
-
nA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
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