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BC237 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistors
BC237...BC239
NPN Silicon Epitaxial Planar Transistor
for switching and amplifier applications
The transistor is subdivided into three groups, A, B,
and C, according to its DC current gain.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Symbol BC237 BC238 BC239 Unit
VCBO
50
30
30
V
VCEO
45
25
25
V
VEBO
6
5
V
IC
100
mA
Ptot
500
mW
Tj
150
OC
TS
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 5 V, IC = 2 mA
Current Gain Group A
B
C
Collector Base Cutoff Current
at VCB = 50 V
at VCB = 30 V
BC237
BC238, BC239
Collector Emitter Breakdown Voltage
BC237
at IC = 2 mA
BC238, BC239
Emitter Base Breakdown Voltage
at IE = 100 µA
Collector Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
Base Emitter Saturation Voltage
at IC = 10 mA, IB = 0.5 mA
at IC = 100 mA, IB = 5 mA
Base Emitter On Voltage
at VCE = 5 V, IC = 2 mA
Current Gain Bandwidth Product
at VCE = 5 V, IC = 10 mA, f = 100 MHz
BC237
BC238, BC239
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
Symbol
hFE
hFE
hFE
ICBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
VBE(on)
fT
Cob
Min.
120
180
380
-
-
45
25
6
5
-
-
-
-
0.55
150
-
Max.
220
460
800
15
15
-
-
-
-
0.2
0.6
0.83
1.05
0.7
-
4.5
Unit
-
-
-
nA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
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