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| BC182 Datasheet, PDF (1/2 Pages) Motorola, Inc – Amplifier Transistors(NPN) | |||
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BC182â¦BC184
NPN Silicon Epitaxial Planar Transistor
for general purpose amplifier applications
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
BC182
BC183, BC184
BC182
BC183, BC184
Emitter Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
Ptot
Tj
TS
1. Collector 2. Base 3. Emitter
TO-92 Plastic Package
Value
Unit
60
V
45
50
V
30
6
V
100
mA
350
mW
150
OC
- 55 to + 150
OC
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at VCE = 5 V, IC = 10 µA
at VCE = 5 V, IC = 2 mA
at VCE = 5 V, IC = 100 mA
BC182, BC183
hFE
40
-
-
BC184
hFE
100
-
-
BC182
hFE
120
500
-
BC183
hFE
120
800
-
BC184
hFE
250
800
-
BC182, BC183
hFE
80
-
-
BC184
hFE
130
-
-
Collector Base Cutoff Current
at VCB = 50 V
at VCB = 30 V
Emitter Base Cutoff Current
at VEB = 4 V
BC182
ICBO
-
BC183, BC184
-
IEBO
-
15
nA
15
15
nA
Collector Base Breakdown Voltage
at IC = 10 µA
BC182
BC183, BC184
V(BR)CBO
60
45
-
-
V
Collector Emitter Breakdown Voltage
at IC = 2 mA
BC182
BC183, BC184
V(BR)CEO
50
30
-
-
V
Emitter Base Breakdown Voltage
at IE = 100 µA
V(BR)EBO
6
-
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/12/2007
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