BAW56 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAW56
HIGH SPEED DOUBLE SWITCHING DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
3
12
Marking Code: A1
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
V_RRM
85
V
Continuous Reverse Voltage
V_R
75
V
Forward Current (DC)
Single Diode Loaded
Double Diode Loaded
I_F
215
mA
125
Repetitive Peak Forward Current
I_FRM
450
mA
Non-Repetitive Peak Forward Current
at t = 1 μs
4
A
at t = 1 ms
I_FSM
1
A
at t = 1 s
0.5
A
Power Dissipation
P_tot
250
mW
Operating Junction Temperature Range
T_J
150
O_C
Storage Temperature Range
T_S
- 65 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 10 mA
at I_F = 50 mA
at I_F = 150 mA
Reverse Current
at V_R = 25 V
at V_R = 75 V
at V_R = 25 V, T_J = 150 ^OC
at V_R = 75 V, T_J = 150 ^OC
Diode Capacitance
at f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA, R_L = 100 Ω
Symbol
Max.
Unit
V_F
715
mV
V_F
855
mV
V_F
1
V
V_F
1.25
V
I_R
30
nA
I_R
1
µA
I_R
30
µA
I_R
50
µA
C_d
2
pF
t_rr
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/01/2008