BAV99W Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV99W
HIGH-SPEED DOUBLE SWITCHING DIODE
3
12
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Single Diode Load ¹⁾
Double Diode Load ¹⁾
Repetitive Peak Forward Current
Non-repetitive Peak Forward Current
Square Wave; T_j = 25 ^OC Prior to Surge
at t = 1 µs
at t = 1 ms
at t = 1 s
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Thermal Resistance from Junction to Ambient ¹⁾
1) _{Device mounted on an FR4 printed-circuit board.}
Characteristics at T_j = 25^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 10 mA
at I_F = 50 mA
at I_F = 150 mA
Reverse Current
at V_R = 25 V
at V_R = 75 V
at V_R = 25 V, T_j = 150 ^OC
at V_R = 75 V, T_j = 150 ^OC
Diode Capacitance
at f = 1 MHz; V_R = 0
Reverse Recovery Time
at I_F = 10 mA to I_R = 10 mA, R_L = 100 Ω; measured at I_R = 1 mA
Forward Recovery Voltage
at I_F = 10mA, t_r = 20 ns
Marking Code: A7
Symbol
V_RRM
V_R
I_F
I_FRM
I_FSM
P_tot
T_j
T_stg
R_{th j-a}
Value
85
75
150
130
500
4
1
0.5
200
150
-65 to +150
625
Unit
V
V
mA
mA
A
mW
O_C
O_C
K/W
Symbol
Max.
Unit
0.715
V_F
0.855
V
1
1.25
30
nA
I_R
1
µA
30
µA
50
µA
C_d
1.5
pF
t_rr
4
ns
V_fr
1.75
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/01/2006