BAV99 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV99
HIGH-SPEED DOUBLE DIODE
fast switching in thick and thin-film circuits diode
3
12
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current (Double Diode Loaded)
Continuous Forward Current (Single Diode Loaded)
Repetitive Peak Forward Current
Non-repetitive Peak Forward Current T_j = 25 ^OC at t = 1 µs
at t = 1 ms
at t = 1 s
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V_RRM
V_R
I_F
I_F
I_FRM
I_FSM
P_tot
T_j
T_stg
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 10 mA
at I_F = 50 mA
at I_F = 150 mA
Reverse Current
at V_R = 25 V
at V_R = 75 V
at V_R = 25 V, T_j = 150 ^OC
at V_R = 75 V, T_j = 150 ^OC
Diode Capacitance
at f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA, I_R = 1 mA, R_L = 100 Ω
Forward Recovery Voltage
at I_F = 10 mA, t_r = 20 ns
Thermal Resistance from Junction to ambient ¹⁾
1) _{Device mounted on an FR4 printed-circuit board.}
Symbol
V_F
I_R
C_d
t_rr
V_fr
R_thja
Marking Code: A7
SOT-23 Plastic Package
Value
Unit
85
V
75
V
125
mA
215
mA
450
mA
4.5
1
A
0.5
250
mW
150
O_C
- 65 to + 150
O_C
Max.
Unit
0.715
0.855
V
1
1.25
30
nA
1
µA
30
µA
50
µA
1.5
pF
4
ns
1.75
V
500
K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 03/02/2009