BAV74 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV74
SILICON PLANAR DUAL SWITCHING DIODE
High Speed Switching Dual Diodes
3
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Peak Repetitive Reverse Voltage
Continuous Reverse Voltage
Forward Current (DC)
Single Diode Loaded
Double Diode Loaded
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current
at t = 1 μs
at t = 1 ms
at t = 1 s
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
12
Symbol
V_RRM
V_R
I_F
I_FRM
I_FSM
P_d
T_J
T_S
Marking Code: A4
SOT-23 Plastic Package
Value
Unit
60
V
50
V
215
mA
125
450
mA
4
1
A
0.5
350
mW
150
O_C
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 10 mA
at I_F = 50 mA
at I_F = 150 mA
Reverse Current
at V_R = 25 V
at V_R = 50 V
at V_R = 25 V, T_J = 150 ^OC
at V_R = 50 V, T_J = 150 ^OC
Diode Capacitance
at f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA to I_R = 1 mA, R_L = 100 Ω
Symbol
Max.
Unit
V_F
715
mV
V_F
855
mV
V_F
1
V
V_F
1.25
V
I_R
30
nA
I_R
0.1
µA
I_R
30
µA
I_R
100
µA
C_d
2
pF
t_rr
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/10/2008