BAV70W Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV70W
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Features
• Fast switching diode
• Ultra small surface mount package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Non-Repetitive Peak Reverse Voltage
Reverse Voltage
Continuous Forward Current
Single diode loaded
Double diode loaded
Repetitive Peak Forward Current
Non-Repetitive Peak Forward Current
at t = 1 µs
at t = 1 ms
at t = 1 s
Power Dissipation
Junction Temperature
Storage Temperature Range
3
12
Symbol
V_RM
V_R
I_F
I_FRM
I_FSM
P_tot
T_J
T_s
Marking Code: A4
Value
Unit
100
V
75
V
175
100
mA
500
mA
4
1
A
0.5
200
mW
150
O_C
- 65 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Reverse Breakdown Voltage
at I_R = 100 µA
Forward Voltage
at I_F = 1 mA
at I_F = 10 mA
at I_F = 50 mA
at I_F = 150 mA
Reverse Leakage Current
at V_R = 25 V
at V_R = 75 V
at V_R = 25 V, T_J = 150 ^OC
at V_R = 75 V, T_J = 150 ^OC
Diode Capacitance
at V_R = 0 V, f = 1 MHz
Reverse Recovery Time
at I_F = 10 mA to I_R = 10 mA, I_rr = 0.1 I_R, R_L = 100 Ω
Symbol
Min.
Max.
Unit
V_BR(R)
75
-
V
-
0.715
V_F
-
0.855
V
-
1
-
1.25
-
30
nA
I_R
-
2.5
µA
-
60
µA
-
100
µA
C_tot
-
2
pF
t_rr
-
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/05/2007