BAV70 Datasheet, PDF (1/2 Pages) NXP Semiconductors – High-speed double diode

BAV70
SILICON EPITAXIAL PLANAR SWITCHING DIODE
Features
• Small package
• Low forward voltage
• Fast reverse recovery time
• Small total capacitance
Applications
• Ultra high speed switching application
3
12
Marking Code: A4
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Maximum Peak Reverse Voltage
V_RM
100
V
Reverse Voltage
V_R
75
V
Average Forward Current
I_O
200
mA
Maximum Peak Forward Current
I_FM
300
mA
Non-Repetitive Peak Forward Surge Current at t = 1 s
at t = 1 µs
I_FSM
1
2
A
Power Dissipation
P_d
350
mW
Junction Temperature
T_j
150
O_C
Storage Temperature Range
T_s
- 55 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 10 mA
at I_F = 50 mA
at I_F = 150 mA
Reverse Current
at V_R = 20 V
at V_R = 75 V
at V_R = 25 V, T_J = 150 ^OC
at V_R = 75 V, T_J = 150 ^OC
Reverse Breakdown Voltage
at I_R = 100 µA
Total Capacitance
at f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA to I_rr = 1 mA, R_L = 50 Ω
Symbol
Min.
Max.
Unit
V_F
-
V_F
-
V_F
-
V_F
-
I_R
I_R
-
I_R
-
I_R
-
V_(BR)R
75
C_T
-
t_rr
-
715
mV
855
mV
1
V
1.25
V
25
nA
2.5
µA
30
µA
50
µA
-
V
2
pF
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/01/2008