BAV23 Datasheet, PDF (1/2 Pages) NXP Semiconductors – General purpose double diode

BAV23 / SE / CC / CA
SURFACE MOUNT SWITCHING DIODES
BAV23
3
BAV23SE
3
BAV23CC
3
BAV23CA
3
12
12
12
12
BAV23SE Marking Code: PY
BAV23CC Marking Code: PZ
BAV23CA Marking Code: RA
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Maximum Repetitive Reverse Voltage
Reverse Voltage
Forward Current
Repetitive Peak Forward Current
Non-repetitive Peak Forward Surge Current at t = 1 µs
at t = 100 µs
at t = 10 ms
Power Dissipation
Thermal Resistance Junction to Ambient Air
Operating Junction and Storage Temperature Range
SOT-23 Plastic Package
Symbol
V_RRM
V_R
I_F
I_FRM
I_FSM
P_D
R_θJA
T_j, T_S
Value
250
200
400
625
9
3
1.7
350
357
- 65 to + 150
Unit
V
V
mA
mA
A
mW
O_C/W
O_C
Electrical Characteristics (T_a = 25 ^OC unless otherwise specified)
Parameter
Symbol
Min.
Max.
Unit
Reverse Breakdown Voltage
at I_R = 100 µA
Forward Voltage
at I_F = 100 mA
at I_F = 200 mA
Reverse Current
at V_R = 200 V, T_j = 25 ^OC
at V_R = 200 V, T_j = 150 ^OC
Total Capacitance
at V_R = 0 V, f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 30 mA, I_rr = 0.1 X I_R, R_L = 100 Ω
V_(BR)R
250
-
V
V_F
-
1
V
-
1.25
I_R
-
100
nA
-
100
µA
C_T
-
5
pF
t_rr
-
50
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 04/07/2006