BAT378W Datasheet, PDF (1/2 Pages) SEMTECH ELECTRONICS LTD. – SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE

BAT378W
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
3
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Maximum Peak Reverse Voltage
Reverse Voltage
Maximum Peak Forward Current
Surge Forward Current (10 ms)
Average Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Operating Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 5 mA
at I_F = 100 mA
Reverse Current
at V_R = 10 V
Total Capacitance
at V_R = 0 V, f = 1 MHz
12
Marking Code: B7
Symbol
Value
Unit
V_RM
15
V
V_R
10
V
I_FM
200
mA
I_FSM
1
A
I_O
100
mA
P_tot
100
mW
T_j
125
O_C
T_s
-55 to +125
O_C
T_opr
-40 to +100
O_C
Symbol Min.
Typ.
Max.
Unit
V_F
-
-
0.3
V
-
-
0.5
I_R
-
-
20
µA
C_T
-
20
40
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 27/02/2006