BAS86 Datasheet, PDF (1/3 Pages) NXP Semiconductors – Schottky barrier diode

BAS86
SCHOTTKY BARRIER DIODE
Ultra High-Speed Switching, Voltage Clamping
Protection Circuits and Blocking Applications
Features
• Low forward voltage.
• Guard ring protected.
• Hermetically-sealed leaded glass package.
• High breakdown voltage.
LL34
Absolute Maximum Ratings (T_a = 25^oC)
Parameter
Continuous reverse voltage
Continuous forward current
Average forward current
Repetitive peak forward current t_p≦1sec.; δ≦0.5
Non-repetitive peak forward current t_p=10ms
Operating ambient temperature
Junction temperature
Storage temperature range
Thermal resistance from junction to ambient
Symbol
V_R
I_F
I_F(AV)
I_FRM
I_FSM
T_amb
T_j
T_S
R_thj-a
Characteristics at T_a = 25^oC
Parameter
Forward voltage
at I_F = 0.1mA
at I_F = 1mA
at I_F = 10mA
at I_F = 30mA
at I_F = 100mA
Reverse current (Note 1)
at V_R = 40V
Reverse recovery time
at I_F = 10mA, I_R = 10mA, R_L = 100^Ω
Diode capacitance
at V_R = 1V, f = 1MHz
Note 1: Pulsed test: tp=300μs; δ=0.02.
Symbol
V_F
V_F
V_F
V_F
V_F
I_R
t_rr
C_d
Min.
-
-
-
-
-
-
-
-
Limits
Unit
50
V
200
mA
200
mA
500
mA
5
A
-65 to +125
℃
125
℃
-65 to +150
℃
320
K/W
Typ.
Max.
Unit
-
300
mV
-
380
mV
-
450
mV
-
600
mV
-
900
mV
-
5
μA
-
4
ns
-
8
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 12/03/2005