BAS85 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier diode

BAS85
SCHOTTKY BARRIER DIODE
Ultra High-Speed Switching, Voltage Clamping
Protection Circuits and Blocking Applications
Features
• Low forward voltage.
• Guard ring protected.
• Hermetically-sealed leaded glass package.
Absolute Maximum Ratings (T_a = 25^oC)
Parameter
Continuous reverse voltage
Continuous forward current
Average forward current
Repetitive peak forward current
Non-repetitive peak forward current
Operating ambient temperature
Junction temperature
Storage temperature range
Thermal resistance from junction to ambient
Symbol
V_R
I_F
I_F(AV)
I_FRM
I_FSM
T_amb
T_j
T_S
R_thja
Characteristics at T_a = 25^oC
Parameter
Forward voltage
at I_F = 0.1mA
at I_F = 1mA
at I_F = 10mA
at I_F = 30mA
at I_F = 100mA
Reverse current
at V_R = 25V
Reverse recovery time
at I_F = 10mA, I_R = 10mA, R_L = 100^Ω
Symbol
V_F
V_F
V_F
V_F
V_F
I_R
t_rr
Min.
-
-
-
-
-
-
-
Limits
Unit
30
V
200
mA
200
mA
300
mA
5
A
-65 to +125
O_C
125
O_C
-65 to +150
O_C
320
K/W
Typ.
Max.
Unit
-
240
mV
-
320
mV
-
400
mV
-
500
mV
-
800
mV
-
2.3
μA
-
4
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/08/2005