BAS70 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS70 / -04 / -05 / -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
• Low Turn-on Voltage
• Fast Switching
• PN Junction Guard ring for Transient and ESD Protection.
BAS70 BAS70-04 BAS70-05 BAS70-06
3
3
3
3
12
12
12
12
SOT-23 Plastic Package
BAS70 Marking Code: 73
BAS70-04 Marking Code: 74
BAS70-05 Marking Code: 75
BAS70-06 Marking Code: 76
Absolute Maximum Ratings (T_a = 25^OC)
Parameter
Peak repetitive reverse voltage
Working peak reverse voltage
DC blocking voltage
Forward continuous current
Non-repetitive peak forward surge current @ tp<1s
Power dissipation
Thermal resistance junction to ambient air
Operating junction temperature range
Storage temperature range
1) _{Device on fiberglass substrate}
Characteristics at T_a = 25^OC
Parameter
Forward voltage
at I_F=1mA
at I_F=15mA
Leakage Current
at V_R=50V
Reverse breakdown voltage
Tested with 10μA
Reverse recovery time
from I_F=10mA through I_R=10mA to I_R=1mA
Capacitance
at VR=0V, f=1MHz
Symbol
V_RRM
V_RWM
V_R
I_F
I_FSM
P_tot
R_θJA
T_J
T_S
Value
70
200¹⁾
600¹⁾
200¹⁾
430¹⁾
150
-55 to +150
Symbol
V_F
V_F
I_R
V_(BR)R
t_rr
C_tot
Min.
-
-
-
70
-
-
Max.
410
1000
100
-
5
2
Unit
V
mA
mA
mW
K/W
O_C
O_C
Unit
mV
mV
nA
V
ns
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/10/2005