BAS40W Datasheet, PDF (1/2 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS40W / -04W / -05W / -06W
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
• Low forward voltage
• Fast switching
BAS40W
3
BAS40-04W
3
BAS40-05W
3
BAS40-06W
3
12
12
12
12
BAS40W
BAS40-04W
BAS40-05W
BAS40-06W
Marking Code: 43
Marking Code: 44
Marking Code: 45
Marking Code: 46
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Peak Forward Surge Current (at tp ≤ 8.3 ms)
Power Disspation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
V_RRM
40
V
V_R
40
V
I_F
200
mA
I_FSM
600
mA
P_d
200
mW
T_J
150
O_C
T_S
- 65 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 40 mA
Reverse Breakdown Voltage
at I_R = 10 μA
Reverse Current
at V_R = 30 V
Total Capacitance
at V_R = 0 V, f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA, I_rr = 0.1 I_R
Symbol
Min.
Max.
Unit
V_F
-
0.38
V
V_F
-
1
V
V_(BR)R
40
-
V
I_R
-
200
nA
C_T
-
5
pF
t_rr
-
5
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 08/11/2007