BAS40 Datasheet, PDF (1/1 Pages) NXP Semiconductors – Schottky barrier double diodes

BAS40 / -04 / -05 / -06
SURFACE MOUNT SCHOTTKY BARRIER DIODE
Features
• Low forward voltage
• Fast switching
BAS40
3
BAS40-04
3
BAS40-05
3
BAS40-06
3
12
12
12
12
SOT-23 Plastic Package
BAS40 Marking Code: 43
BAS40-04 Marking Code: 44
BAS40-05 Marking Code: 45
BAS40-06 Marking Code: 46
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current
Peak Forward Surge Current (at tp < 1 s)
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 40 mA
Reverse Current
at V_R = 30 V
Reverse Breakdown Voltage
at I_R = 10 μA
Reverse Recovery Time
from I_F = 10 mA through I_R = 10 mA to I_R = 1 mA
Total Capacitance
at V_R = 0 V, f = 1 MHz
Symbol
Value
Unit
V_RRM
40
V
V_R
40
V
I_F
200
mA
I_FSM
600
mA
T_J
150
O_C
T_S
- 55 to + 150
O_C
Symbol
V_F
V_F
I_R
V_(BR)R
t_rr
C_T
Min.
-
-
-
40
-
-
Max.
Unit
380
mV
1000
mV
200
nA
-
V
5
ns
5
pF
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/06/2006