BAS32L Datasheet, PDF (1/4 Pages) NXP Semiconductors – High-speed diode

BAS32L
HIGH SPEED DIODE
FEATURES
• Small hermetically-sealed glass SMD package
• High switching speed
• Continuous reverse voltage
• Repetitive peak reverse voltage
• Repetitive peak forward current
APPLICATION
• High-Speed Switching
• Fast Logic Applications
Absolute Maximum Ratings (Ta = 25^oC)
Parameter
Symbol
Limits
Unit
Repetitive peak reverse voltage
V_RRM
75
V
Continuous reverse voltage
V_R
75
V
Continuous forward current (note1)
I_F
200
mA
Repetitive peak forward current
I_FRM
450
mA
Non-repetitive peak forward current
Square wave, Tj = 25 ℃ prior to surge t=1μs
4
t=1ms
I_FSM
1
A
t=1s
0.5
Power dissipation
Junction temperature
Storage temperature range
P_tot
500
mW
T_j
200
O_C
T_S
-65 to +200
O_C
Thermal resistance from junction to tie point
R_thjtp
300
K/W
Thermal resistance from junction to ambient
R_thja
350
K/W
Note 1: Device mounted on an FR4printed- circuit board.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 16/01/2003