BAS19 Datasheet, PDF (1/1 Pages) NXP Semiconductors – General purpose diodes

BAS19, BAS20, BAS21
HIGH VOLTAGE SWITCHING DIODES
BAS19
BAS20
BAS21
Marking Code: HA
Marking Code: HB
Marking Code: HC
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Continuous Reverse Voltage
Continuous Forward Current
BAS19
BAS20
BAS21
Peak Forward Surge Current
Total Device Dissipation FR-5 Board ¹⁾
T_A=25 ^OC
Derate above 25 ^OC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate ²⁾
T_A=25 ^OC
Derate above 25 ^OC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Range
Characteristics at T_j = 25 ^OC
Parameter
Forward Voltage
at I_F = 100 mA
at I_F = 200 mA
Reverse Breakdown Voltage
at I_BR = 100 µA
at I_BR = 100 µA
at I_BR = 100 µA
Reverse Voltage Leakage Current
at V_R = 100 V
at V_R = 150 V
at V_R = 200 V
at V_R = 100 V, T_J = 150 ^OC
at V_R = 150 V, T_J = 150 ^OC
at V_R = 200 V, T_J = 150 ^OC
Diode Capacitance
at f = 1 MHz
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
BAS19
BAS20
BAS21
Reverse Recovery Time
at I_F = I_R= 30 mA, I_R(REC) = 3 mA, R_L = 100 Ω
1) _{FR-5=1 x 0.75 x 0.062 in.}
2) _{Alumina=0.4 x 0.3 x 0.024in.99.5% alumina.}
3
12
Symbol
V_R
I_F
I_FM(surge)
SOT-23 Plastic Package
Value
Unit
120
200
V
250
200
mA
625
mA
P_D
R_θJA
225
mW
1.8
mW/^OC
556
O_C/W
P_D
R_θJA
T_J ,T_S
300
2.4
417
-55 to +150
mW
mW/^OC
O_C/W
O_C
Symbol
Min.
Max.
Unit
V_F
-
1
V
V_F
-
1.25
V
V_(BR)
120
-
V
V_(BR)
200
-
V
V_(BR)
250
-
V
I_R
-
0.1
µA
I_R
-
0.1
µA
I_R
-
0.1
µA
I_R
-
100
µA
I_R
-
100
µA
I_R
-
100
µA
C_d
-
5
pF
t_rr
-
50
ns
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 19/12/2005