BAS16W Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – SURFACE MOUNT SWITCHING DIODES

BAS16W
Silicon Epitaxial Planar Small Signal Diode
High Speed Switching Diode
3
12
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current (at T_S = 90 ^OC)
Repetitive Peak Forward Current
Non-repetitive Peak Forward Current
at Square Wave; T_j = 25 ^OC Prior to Surge
t = 1 µs
t = 1 ms
t=1s
Total Power Dissipation (at T_S = 90 ^OC)
Thermal Resistance from Junction to Soldering Point
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 10 mA
at I_F = 50 mA
at I_F = 150 mA
Reverse Current
at V_R = 25 V
at V_R = 75 V
at V_R = 25 V, T_J = 150 ^OC
at V_R = 75 V, T_J = 150 ^OC
Diode Capacitance
at f = 1 MHz
Reverse Recovery Time
when switched from I_F = 10 mA to I_R = 10 mA,
R_L = 100 Ω; measured at I_R = 1 mA
Forward Recovery Voltage
when switched from I_F = 10 mA, t_r = 20 ns
Symbol
V_RRM
V_R
I_F
I_FRM
I_FSM
P_tot
R_{th j-S}
T_j
T_stg
Symbol
V_F
V_F
V_F
V_F
I_R
I_R
I_R
I_R
C_D
t_rr
V_fr
Marking Code: A6
Value
Unit
85
V
75
V
155
mA
500
mA
4
1
A
0.5
170
mW
350
K/W
150
O_C
- 65 to + 150
O_C
Max.
Unit
715
mV
855
mV
1000
mV
1250
mV
30
nA
1
µA
30
µA
50
µA
1.5
pF
4
ns
1.75
V
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 02/08/2006