BAS116 Datasheet, PDF (1/2 Pages) NXP Semiconductors – Low-leakage diode

BAS116
LOW LEAKAGE SWITCHING DIODE
Features
• Plastic SMD package
• Low leakage current
• High switching speed
Application
• Low leakage current applications in
surface mounted circuits.
3
12
Marking Code: JV
SOT-23 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
V_RRM
85
V
Continuous Reverse Voltage
V_R
75
V
Continuous Forward Current
I_F
215
mA
Repetitive Peak Forward Current
I_FRM
500
mA
Non-Repetitive Peak Forward Surge Current
t = 1 µs
4
t = 1 ms
I_FSM
1
A
t=1s
0.5
Power Dissipation
P_tot
250
mW
Junction Temperature
T_j
150
O_C
Storage Temperature Range
T_S
- 65 to + 150
O_C
Characteristics at T_a = 25 ^OC
Parameter
Forward Voltage
at I_F = 1 mA
at I_F = 10 mA
at I_F = 50 mA
at I_F = 150 mA
Reverse Current
at V_R = 75 V
at V_R = 75 V, T_J = 150 ^OC
Diode Capacitance
at f = 1 MHz
Reverse Recovery Time
at I_F = I_R = 10 mA, R_L = 100 Ω, i_rr = 0.1 I_R
Symbol
Max.
Unit
V_F
0.9
V
V_F
1
V
V_F
1.1
V
V_F
1.25
V
I_R
5
nA
80
C_d
2
pF
t_rr
3
µs
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 22/01/2008