BA592WS Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – SILICON RF SWITCHING DIODE

BA592WS
SILICON RF SWITCHING DIODE
Features
• Very low forward resistance
• Small capacitance
Applications
• For band switching in TV/VTR
tuners and mobile applications
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Diode Reverse Voltage
Forward Current
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics at T_a = 25 ^OC
Parameter
Reverse Current
at V_R = 20 V
Forward Voltage
at I_F = 100 mA
Diode Capacitance
at V_R = 1 V, f = 1 MHz
at V_R = 3 V, f = 1 MHz
Reverse Parallel Resistance
at V_R = 0 V, f = 100 MHz
Forward Resistance
at I_F = 3 mA, f = 100 MHz
at I_F = 10 mA, f = 100 MHz
Series Inductance
PINNING
PIN
1
2
DESCRIPTION
Cathode
Anode
1
2
W4
Top View
Marking Code: "W4"
Simplified outline SOD-323 and symbol
Symbol
Value
Unit
V_R
35
V
I_F
100
mA
T_J
150
O_C
T_op
- 55 to + 125
O_C
T_stg
- 55 to + 150
O_C
Symbol Min. Typ. Max. Unit
I_R
-
-
20
nA
V_F
-
-
1
V
C_T
0.65
-
0.6
-
1.4
pF
1.1
R_P
-
100
-
KΩ
r_f
-
-
0.7
Ω
-
-
0.5
L_s
-
1.8
-
nH
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 01/09/2006