2SA1900U Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

2SA1900U
PNP Silicon Epitaxial Planar Transistor
Medium power transistor
Absolute Maximum Ratings (T_a = 25℃)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (P_w = 20 ms)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
1) _{When mounted on a 40 x 40 x 0.7 mm ceramic board.}
Characteristics at T_a = 25℃
Parameter
DC Current Gain
at -V_CE = 3 V, -I_C = 500 mA
Collector Base Cutoff Current
at -V_CB = 40 V
Emitter Base Cutoff Current
at -V_EB = 4 V
Collector Base Breakdown Voltage
at -I_C = 50 µA
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E = 50 µA
Collector Emitter Saturation Voltage
at -I_C = 500 mA, -I_B = 50 mA
Transition Frequency
at -V_CE = 5 V, I_E = 50 mA, f = 100 MHz
Collector Output Capacitance
at -V_CB = 10 V, f = 1 MHz
Symbol
Value
Unit
-V_CBO
60
V
-V_CEO
50
V
-V_EBO
5
V
-I_C
1
A
-I_CP
2
A
P_C
0.5
2 ¹⁾
W
T_j
150
℃
T_stg
- 55 to + 150
℃
Symbol
h_FE
Min.
120
-I_CBO
-
-I_EBO
-
-V_(BR)CBO
60
-V_(BR)CEO
50
-V_(BR)EBO
5
-V_CE(sat)
-
f_T
-
C_ob
-
Typ.
-
-
-
-
-
-
-
150
20
Max.
270
100
100
-
-
-
0.4
-
-
Unit
-
nA
nA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated：20/01/2016 Rev：03