2SA1797U Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor

2SA1797U
PNP Silicon Epitaxial Planar Transistor
Medium power transistor
Absolute Maximum Ratings (T_a = 25℃)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Current (P_w = 20 ms)
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
Value
Unit
-V_CBO
50
V
-V_CEO
50
V
-V_EBO
6
V
-I_C
2
A
-I_CP
3
A
P_C
0.5
W
T_j
150
℃
T_stg
- 55 to + 150
℃
Characteristics at T_a = 25℃
Parameter
DC Current Gain
at -V_CE = 2 V, -I_C = 500 mA
Current Gain Group
Collector Base Cutoff Current
at -V_CB = 50 V
Emitter Base Cutoff Current
at -V_EB = 5 V
Collector Base Breakdown Voltage
at -I_C = 50 µA
Collector Emitter Breakdown Voltage
at -I_C = 1 mA
Emitter Base Breakdown Voltage
at -I_E = 50 µA
Collector Emitter Saturation Voltage
at -I_C = 1 A, -I_B = 50 mA
Transition Frequency
at -V_CE = 2 V, -I_C = 500 mA, f = 100 MHz
Collector Output Capacitance
at -V_CB = 10 V, f = 1 MHz
Symbol Min.
P
h_FE
82
Q
h_FE
120
R
h_FE
180
-I_CBO
-
-I_EBO
-
-V_(BR)CBO 50
-V_(BR)CEO 50
-V_(BR)EBO
6
-V_CE(sat)
-
f_T
-
C_ob
-
Typ.
-
-
-
-
-
-
-
-
-
200
36
Max.
180
270
390
100
100
-
-
-
0.35
-
-
Unit
-
-
-
nA
nA
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated：31/05/2016 Rev：01