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| 2SA1666U Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor | |||
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2SA1666U
PNP Silicon Epitaxial Planar Transistor
for high current application
Absolute Maximum Ratings (Ta = 25â)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
1) When mounted on a 250 mm2 x 0.8 t ceramic substrate.
Symbol
Value
Unit
-VCBO
50
V
-VCEO
50
V
-VEBO
5
V
-IC
2
A
-IB
0.4
A
Ptot
0.5
1 1)
W
Tj
150
â
Tstg
- 55 to + 150
â
Characteristics at Ta = 25â
Parameter
Symbol Min. Typ. Max. Unit
DC Current Gain
at -VCE = 2 V, -IC = 500 mA
at -VCE = 2 V, -IC = 1.5 A
Current Gain Group O hFE
70
-
140
-
Y
hFE
120
-
240
-
hFE
40
-
-
-
Collector Base Cutoff Current
at -VCB = 50 V
-ICBO
-
-
100
nA
Emitter Base Cutoff Current
at -VEB = 5 V
-IEBO
-
-
100
nA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
-V(BR)CEO
50
-
-
V
Collector Emitter Saturation Voltage
at -IC = 1 A, -IB = 50 mA
-VCE(sat)
-
-
0.5
V
Base Emitter Saturation Voltage
at -IC = 1 A, -IB = 50 mA
-VBE(sat)
-
-
1.2
V
Transition Frequency
at -VCE = 2 V, -IC = 500 mA
fT
-
120
-
MHz
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Cob
-
40
-
pF
SEMTECH ELECTRONICS LTD.
®
Datedï¼20/01/2016 Rev: 03
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