2SA1013 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – TRANSISTOR (COLOR TV VERT. DEFELCTION OUTPUT APPLICATIONS)

2SA1013
PNP Silicon Epitaxial Planar Transistor
The transistor is subdivided into three groups, R,
O and Y, according to its DC current gain.
On special request, these transistors can be
manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V_CBO
-V_CEO
-V_EBO
-I_C
-I_B
P_tot
T_j
T_stg
Value
160
160
6
1
0.5
900
150
- 55 to + 150
Characteristics at T_a= 25 ^oC
Parameter
Symbol
DC Current Gain
at -V_CE = 5 V, -I_C = 200 mA
Current Gain Group R
h_FE
O
h_FE
Y
h_FE
Collector Base Cutoff Current
at -V_CB = 150 V
Emitter Base Cutoff Current
at -V_EB = 6 V
Collector Emitter Breakdown Voltage
at -I_C = 10 mA
Collector Emitter Saturation Voltage
at -I_C = 500 mA, -I_B = 50 mA
Base Emitter On Voltage
at -I_C = 5 mA, -V_CE = 5 V
Current Gain Bandwidth Product
at -V_CE = 5 V, -I_C = 200 mA
Output Capacitance
at -V_CB = 10 V, f = 1 MHz
-I_CBO
-I_EBO
-V_(BR)CEO
-V_CE(sat)
-V_BE(on)
f_T
C_OB
Min.
60
100
160
-
-
160
-
0.45
15
-
Max.
120
200
320
1
1
-
1.5
0.75
-
35
Unit
V
V
V
A
A
mW
O_C
O_C
Unit
-
-
-
A
A
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated : 16/01/2016 CL Rev: 01