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| 2SA1012Z Datasheet, PDF (1/1 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor | |||
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2SA1012Z
PNP Silicon Epitaxial Planar Transistor
High current switching application
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 1 V, -IC = 1 A
at -VCE = 1 V, -IC = 3 A
Collector Base Cutoff Current
at -VCB = 50 V
Emitter Base Cutoff Current
at -VEB = 5 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 10 mA
Emitter Base Breakdown Voltage
at -IE = 100 µA
Collector Emitter Saturation Voltage
at -IC = 3 A, -IB = 150 mA
Base Emitter Saturation Voltage
at -IC = 3 A, -IB = 150 mA
Transition Frequency
at -VCE = 4 V, -IC = 1 A
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Turn on Time
at -VCC = 30 V, -IB1 = IB2 = 0.15 A, Duty Cycle ⤠2%
Storage Time
at -VCC = 30 V, -IB1 = IB2 = 0.15 A, Duty Cycle ⤠2%
Fall Time
at -VCC = 30 V, -IB1 = IB2 = 0.15 A, Duty Cycle ⤠2%
1.Base 2. Collector 3. Emitter
TO-251 Plastic Package
Symbol
Value
Unit
-VCBO
60
V
-VCEO
50
V
-VEBO
5
V
-IC
5
A
PC
25
W
Tj
150
OC
Tstg
- 55 to + 150
OC
Symbol Min.
hFE
70
hFE
30
-ICBO
-
-IEBO
-
-V(BR)CBO
60
-V(BR)CEO
50
-V(BR)EBO
5
-VCE(sat)
-
-VBE(sat)
-
fT
-
Cob
-
ton
-
ts
-
tf
-
Typ.
-
-
-
-
-
-
-
-
-
60
170
-
-
-
Max.
240
-
1
1
-
-
-
0.4
1.2
-
-
0.1
1
0.1
Unit
-
-
µA
µA
V
V
V
V
V
MHz
pF
µs
µs
µs
SEMTECH ELECTRONICS LTD.
®
Dated : 22/09/2016 Rev: 01
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