2SA1012 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(5A,50V,25W)

2SA1012
PNP Silicon Epitaxial Planar Transistor
for high current switching applications.
The transistor is subdivided into two group, O and
Y, according to its DC current gain.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_amb = 25 ^OC
Parameter
DC Current Gain
at -V_CE = 1 V, -I_C = 1 A
at -V_CE = 1 V, -I_C = 3 A
Collector Emitter Breakdown Voltage
at -I_C = 10 mA
Collector Cutoff Current
at -V_CB = 50 V
Emitter Cutoff Current
at -V_EB = 5 V
Collector Emitter Saturation Voltage
at -I_C = 3 A, -I_B = 0.15 A
Base Emitter Saturation Voltage
at -I_C = 3 A, -I_B = 0.15 A
Transition Frequency
at -V_CE = 4 V, -I_C = 1 A
Collector Output Capacitance
at -V_CB = 10 V, f = 1 MHz
TO-220 Plastic Package
Symbol
Value
Unit
-V_CBO
60
V
-V_CEO
50
V
-V_EBO
5
V
-I_C
5
A
P_tot
25
W
T_j
150
O_C
T_s
-55 to +150
O_C
Symbol Min.
O
h_FE
Y
h_FE
h_FE
-V_(BR)CEO
-I_CBO
-I_EBO
-V_CE(sat)
-V_BE(sat)
f_T
C_ob
70
120
30
50
-
-
-
-
-
-
Typ. Max.
-
140
-
240
-
-
-
-
-
1
-
1
-
0.4
-
1.2
60
-
170
-
Unit
-
-
-
V
µA
µA
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated : 17/09/2016 Rev: 01