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| 2N5401U Datasheet, PDF (1/3 Pages) SEMTECH ELECTRONICS LTD. – PNP Silicon Epitaxial Planar Transistor | |||
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2N5401U
PNP Silicon Epitaxial Planar Transistor
for high voltage amplifier applications
Absolute Maximum Ratings (Ta = 25â)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25â
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 1 mA
at -VCE = 5 V, -IC = 10 mA
at -VCE = 5 V, -IC = 50 mA
Collector Base Cutoff Current
at -VCB = 120 V
Emitter Base Cutoff Current
at -VEB = 3 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
Base Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
at -IC = 50 mA, -IB = 5 mA
Gain Bandwidth Product
at -VCE = 10 V, -IC = 10 mA, f = 100 MHz
Output Capacitance
at -VCB =10 V, f = 1 MHz
Symbol
Value
Unit
-VCBO
160
V
-VCEO
150
V
-VEBO
5
V
-IC
600
mA
Ptot
500
mW
Tj
150
â
Tstg
- 55 to + 150
â
Symbol
hFE
hFE
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(sat)
fT
Cobo
Min.
50
60
50
-
-
160
150
5
-
-
-
-
100
-
Max.
-
240
-
50
50
-
-
-
0.2
0.5
1
1
300
6
Unit
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Datedï¼18/01/2016 Rev: 03
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