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2N5086 Datasheet, PDF (1/4 Pages) Samsung semiconductor – PNP EPITAXIAL SILICON TRANSISTOR
2N5086 / 2N5087
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group
according to it DC current gain. As complementary
type the NPN transistor 2N5088 and 2N5089 are
recommended.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at -VCE = 5 V, -IC = 0.1 mA
at -VCE = 5 V, -IC = 1 mA
at -VCE = 5 V, -IC = 10 mA
Collector Base Cutoff Current
at -VCB = 35 V
Emitter Base Cutoff Current
at -VEB = 3 V
Collector Base Breakdown Voltage
at -IC = 100 µA
Collector Emitter Breakdown Voltage
at -IC = 1 mA
Emitter Base Breakdown Voltage
at -IE = 10 µA
Collector Emitter Saturation Voltage
at -IC = 10 mA, -IB = 1 mA
Base Emitter Voltage
at -VCE = 5 V, -IC = 1 mA
Gain Bandwidth Product
at -VCE = 5 V, -IC = 0.5 mA
Collector Output Capacitance
at -VCB = 10 V, f = 1 MHz
Symbol
-VCBO
-VCEO
-VEBO
-IC
Ptot
Tj
Tstg
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Value
Unit
50
V
50
V
3
V
50
mA
500
mW
150
OC
- 55 to + 150
OC
Symbol
2N5086
2N5087
2N5086
2N5087
2N5086
2N5087
hFE
hFE
hFE
hFE
hFE
hFE
-ICBO
-IEBO
-V(BR)CBO
-V(BR)CEO
-V(BR)EBO
-VCE(sat)
-VBE(on)
fT
Cob
Min.
150
200
150
200
150
200
-
-
50
50
3
-
-
40
-
Max.
500
800
-
-
-
-
50
50
-
-
-
0.3
0.85
-
4
Unit
-
-
-
-
-
-
nA
nA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated : 16/08/2016 Rev: 01
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