2N3704 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier

2N3704
NPN Silicon Epitaxial Planar Transistor
for general purpose applications.
On special request, these transistors can be
manufactured in different pin configurations.
Absolute Maximum Ratings (T_a = 25 ^OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at T_a = 25 ^OC
Parameter
DC Current Gain
at V_CE = 2 V, I_C = 50 mA
Collector Base Cutoff Current
at V_CB = 20 V
Emitter Base Cutoff Current
at V_EB = 3 V
Collector Base Breakdown Voltage
at I_C = 100 µA
Collector Emitter Breakdown Voltage
at I_C = 10 mA
Emitter Base Breakdown Voltage
at I_E = 100 µA
Collector Emitter Saturation Voltage
at I_C = 100 mA, I_B = 5 mA
Base Emitter On Voltage
at V_CE = 2 V, I_C = 100 mA
Gain Bandwidth Product
at V_CE = 2 V, I_C = 50 mA, f = 20 MHz
Collector Output Capacitance
at V_CB = 10 V, f = 1 MHz
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Symbol
Value
Unit
V_CBO
50
V
V_CEO
30
V
V_EBO
5
V
I_C
600
mA
P_tot
625
mW
T_j
150
O_C
T_stg
- 55 to + 150
O_C
Symbol
h_FE
I_CBO
I_EBO
V_(BR)CBO
V_(BR)CEO
V_(BR)EBO
V_CE(sat)
V_BE(on)
f_T
C_ob
Min.
100
-
-
50
30
5
-
0.5
100
-
Max.
300
100
100
-
-
-
0.6
1
-
12
Unit
-
nA
nA
V
V
V
V
V
MHz
pF
SEMTECH ELECTRONICS LTD.
®
Dated : 16/08/2016 Rev: 01