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| 2N3416 Datasheet, PDF (1/1 Pages) Fairchild Semiconductor – NPN General Purpose Amplifier | |||
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2N3416 / 2N3417
NPN Silicon Epitaxial Planar Transistor
General Purpose Amplifier
For use as general purpose amplifiers and switches
requiring collector current to 300 mA.
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
DC Current Gain
at VCE = 4.5 V, IC = 2 mA
Collector Base Cutoff Current
at VCB = 25 V
Emitter Base Cutoff Current
at VEB = 5 V
Collector Base Breakdown Voltage
at IC = 10 µA
Collector Emitter Breakdown Voltage
at IC = 10 mA
Emitter Base Breakdown Voltage
at IE = 10 µA
Collector Emitter Saturation Voltage
at IC = 50 mA, IB = 3 mA
Base Emitter Saturation Voltage
at IC = 50 mA, IB = 3 mA
1. Emitter 2. Collector 3. Base
TO-92 Plastic Package
Symbol
Value
Unit
VCBO
50
V
VCEO
50
V
VEBO
5
V
IC
500
mA
Ptot
625
mW
Tj
150
OC
Tstg
- 55 to + 150
OC
Symbol
2N3416
hFE
2N3417
hFE
ICBO
IEBO
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCE(sat)
VBE(sat)
Min.
75
180
-
-
50
50
5
-
0.6
Max.
225
540
100
100
-
-
-
0.3
1.3
Unit
-
-
nA
nA
V
V
V
V
V
SEMTECH ELECTRONICS LTD.
®
Dated : 16/08/2016 Rev: 01
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